| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact excellent in durability and having insulative surfaces, which is suitable as a part used in a semiconductor production device or an electronic information apparatus or as a structural part of a vacuum device or the like. SOLUTION: This silicon carbide sintered compact is obtained by sintering a mixture containing at least a silicon carbide powder and a nonmetallic sintering aid, then coating the sintered compact with silica sol and subjecting the coated sintered compact to heat treatment at >=600 deg.C under the atmosphere. It is preferable that the volume resistivity of the surface is >=101Ω.cm, the concentration of the silica sol is 20 to 40 wt.%, the coated amount of the silica sol is 0.01 to 0.05 g/cm2 and the temperature at heat treatment is 750 to 850 deg.C.
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