| 摘要 |
A semiconductor dynamic random access memory device has a memory cell array divided into columns of memory cell blocks equal to a natural number except powers of two such as, for example, six and arranged in rows and columns, redundant memory cells are formed in two columns of memory cell blocks so as to equalize the loads driven by decoder units of a column address decoder, and the memory cell blocks are respectively formed in areas equal in width to one another so as to equalize sub-word lines connected between row address sub-decoders and the regular/redundant memory cells regardless of the number of regular/redundant memory cells incorporated in each memory cell block.
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