| 摘要 |
A voltage boost circuit for a write driver includes first and second semiconductor devices, such as Schottky diodes, coupled to respective first and second nodes to conduct write current through respective first or second current switches of the write driver when a forward voltage across the respective first or second semiconductor device exceeds a design voltage. The first and second current switches are responsive to respective complementary first and second input signals to direct write current in opposite directions through the winding between the first and second nodes. First and second storage devices are connected to the respective first and second semiconductor devices, and first and second buffers are responsive to a first state of the respective first and second input signals to operate the respective first or second storage device to increase the forward voltage across the respective first or second semiconductor device. Preferably, each buffer is responsive to a second state of the respective input signal to operate the respective storage device to decrease the forward voltage across the respective semiconductor device.
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