| 摘要 |
A main electrode (14) is connected to an n-type semiconductor layer (7) selectively formed on a major surface of a silicon substrate. A silicide layer (15) is interposed between the main electrode (14) and the semiconductor layer (7). The silicide layer (15) is heat-treated at 600° C. to 850° C. for at least 30 minutes, to have an epitaxial layer selectively epitaxially growing in a specific direction such as the <110> direction toward the semiconductor layer (7). Therefore, irregularities are formed on the interface between the silicide layer (15) and the semiconductor layer (7). The interface resistivity between the silicide layer (15) and the semiconductor layer (7) is low due to the presence of the epitaxial layer, and besides the contact area of the interface is large due to the irregularities of the interface. Consequently, the contact resistance between the main electrode (14) and the semiconductor layer (7) is effectively reduced. Thus, the contact resistance between the main electrode (14) and the semiconductor substrate is reduced.
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