| 摘要 |
A method for manufacturing a capacitor includes the steps of a) forming a sacrificial layer over the etching stop layer, b) partially removing the sacrificial layer, the etching stop layer, and the dielectric layer to form a contact window, c) forming a first conducting layer over the sacrificial layer and in the contact window, d) partially removing the first conducting layer and the sacrificial layer to expose a portion of the sacrificial layer and retain a portion of the first conducting layer, e) forming a second conducting layer over top surfaces and sidewalls of the portion of the first conducting layer and the portion of the sacrificial layer, and f) partially removing the second conducting layer while retaining a portion of the second conducting layer alongside the portion of the first conducting layer and the portion of the sacrificial layer, and removing the portion of the sacrificial layer to expose the etching stop layer and construct a capacitor plate with a generally cross-sectionally modified T-shaped structure. This structure not only effectively increases the surface area of the capacitor but only has a smooth top surface which is conducive to the subsequent planarization process.
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