| 发明名称 |
AND-type non-volatile semiconductor memory device and method of manufacturing thereof |
| 摘要 |
An interlayer insulating film is formed by the CVD method to cover a side surface of lower floating gate, and the top surface of said interlayer insulating film is planarized. An upper floating gate is formed extending over lower floating gate and interlayer insulating film. A control gate is formed on upper floating gate with an insulating film therebetween.
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| 申请公布号 |
US6236081(B1) |
申请公布日期 |
2001.05.22 |
| 申请号 |
US19980215228 |
申请日期 |
1998.12.18 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUKUMOTO ATSUSHI |
| 分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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