发明名称 |
Semiconductor mirror-polished surface wafers and method for manufacturing the same |
摘要 |
A method for manufacturing semiconductor wafers is provided. According to this invention, wafers are obtained by slicing a single-crystal semiconductor ingot. The sliced wafers are beveled at their peripheral rims. The beveled wafers are flattened by a lapping process. The front and the rear surfaces of the flattened wafers are spin-etched with an acid etchant liquid. The glossiness of the rear surfaces of the spin-etched wafers is controlled to a value of 130-300 %. The front surfaces of the wafers whose rear surfaces have been spin-etched are polished, thereby obtaining mirror-polished surfaces. The front surfaces may also be spin-etched prior to polishing.
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申请公布号 |
US6234873(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19980179934 |
申请日期 |
1998.10.28 |
申请人 |
KOMATSU ELECTRONIC METALS CO., LTD. |
发明人 |
YAMAMOTO HIROAKI;ISHII AKIHIRO;IMURA KOUICHI |
分类号 |
H01L21/306;H01L21/02;H01L21/304;(IPC1-7):H01L21/304;B24B49/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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