发明名称 Semiconductor mirror-polished surface wafers and method for manufacturing the same
摘要 A method for manufacturing semiconductor wafers is provided. According to this invention, wafers are obtained by slicing a single-crystal semiconductor ingot. The sliced wafers are beveled at their peripheral rims. The beveled wafers are flattened by a lapping process. The front and the rear surfaces of the flattened wafers are spin-etched with an acid etchant liquid. The glossiness of the rear surfaces of the spin-etched wafers is controlled to a value of 130-300 %. The front surfaces of the wafers whose rear surfaces have been spin-etched are polished, thereby obtaining mirror-polished surfaces. The front surfaces may also be spin-etched prior to polishing.
申请公布号 US6234873(B1) 申请公布日期 2001.05.22
申请号 US19980179934 申请日期 1998.10.28
申请人 KOMATSU ELECTRONIC METALS CO., LTD. 发明人 YAMAMOTO HIROAKI;ISHII AKIHIRO;IMURA KOUICHI
分类号 H01L21/306;H01L21/02;H01L21/304;(IPC1-7):H01L21/304;B24B49/00 主分类号 H01L21/306
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