发明名称 |
Wet-etching facility for manufacturing semiconductor devices |
摘要 |
There is provided a wet-etching facility for manufacturing semiconductor devices, wherein the etching process is performed for a wafer with its used surface facing downward so that the by-products from the etching process are completely removed from the etching groove of the wafer by gravity, and the impurities on the back side of the wafer are sank down, and are not touched to the used surface of the other wafer thereby producing good quality of wafers.The wet-etching facility for manufacturing semiconductor devices comprises a bath containing an amount of chemical; a chemical supply part for supplying an amount of chemical to the bath; a chemical discharge part for discharging the chemical inside the bath to the outside; a wafer guide holding and fixing a wafer with its used surface facing downward, and placing the wafer into a chemical; a transfer robot for loading and unloading the wafer into the wafer guide; and a chemical spray part for spraying the chemical at a high pressure such that the chemical flows along a surface of the wafer.
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申请公布号 |
US6235147(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19990406887 |
申请日期 |
1999.09.28 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
LEE SEUNG-KUN;JUNG JAE-HYUNG;YUN YOUNG-HWAN;KWAG GYU-HWAN |
分类号 |
H01L21/306;H01L21/00;H01L21/304;H01L21/3063;(IPC1-7):B08B3/02 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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