发明名称 Semiconductor radiation detector
摘要 A semiconductor radiation detector has a plurality of semiconductor cells arrayed in a matrix parallel to the X-Y plane. A plurality of common electrodes for applying an operating voltage to the semiconductor cells are arranged perpendicularly to the X-Y plane. A plurality of signal electrodes for reading out signals from the semiconductor cells are arranged perpendicularly to the X-Y plane. According to a feature of this invention, each common electrode is shared by a pair of semiconductor cells adjacent in the X direction, and each signal electrode is shared by a pair of semiconductor cells adjacent in the X direction. With this arrangement, the dead zone can be reduced to increase the pixel density, in other words, the spatial resolution. If the pixel density is kept unchanged, the sensible zone of the semiconductor cell can be widened to increase the detection sensitivity.
申请公布号 US6236051(B1) 申请公布日期 2001.05.22
申请号 US19990277162 申请日期 1999.03.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMAKAWA TSUTOMU;ICHIHARA TAKASHI
分类号 G01T1/24;G01T1/29;(IPC1-7):G01T1/24 主分类号 G01T1/24
代理机构 代理人
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