发明名称 |
Semiconductor device having deposited silicon regions and a method of fabrication |
摘要 |
The present invention describes an MOS device having deposited silicon regions and its a method of fabrication. In one embodiment of the present invention a substrate having a thin oxide layer formed on a silicon surface is heated and exposed to an ambient comprising germane (GeH4) to remove the thin oxide from the silicon surface. A silicon or silicon alloy film can then be deposited onto the silicon surface of the substrate.
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申请公布号 |
US6235568(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19990235782 |
申请日期 |
1999.01.22 |
申请人 |
INTEL CORPORATION |
发明人 |
MURTHY ANAND;JAN CHIA-HONG;ANDIDEH EBRAHIM;WELDON KEVIN |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823;H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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