| 摘要 |
PROBLEM TO BE SOLVED: To improve the conversion efficiency of a solar cell in a compound semiconductor and to prevent a valid light-receiving area from greatly reducing. SOLUTION: The pn-junction layer 14 of the compound semiconductor which is to be annealed is annealed in a state where it is partially covered with a dielectric film 15a having a coefficient of thermal expansion different from that of the junction layer 14. Dislocations concentrate on an area which is partially covered with the dielectric film 15a of the PN-junction layer 14 and dislocation density is reduced in an area which is exposed from the dielectric film 15a. Thus, the larger area as much as possible in the area where dislocation density is reduced can be used as a valid light-receiving surface by forming a surface electrode 20 in connection to the area on which the dislocations concentrate. |
