| 摘要 |
<p>An apparatus for depositing a material on a wafer (30) includes a susceptor plate (32) mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate (32) has a plurality of support posts (36) projecting from its top surface (34). The support posts (36) are arranged to support a wafer (30) thereon with the back surface of the wafer (30) being spaced from the surface (34) of the susceptor plate (32). The support posts (36) are of a length so that the wafer (30) is spaced from the susceptor plate (32) a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer (30) and the susceptor plate (32), but still allow heat transfer from the susceptor plate (32) to the wafer (30) mainly by conduction. The susceptor plate (32) is also provided with means, such as retaining pins (38) or a recess, to prevent lateral movement of a wafer (30) seated on the support posts (36). <IMAGE></p> |
