| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD |
| 摘要 |
PURPOSE: To make it possible to form a crystallized silicon film by using a catalytic element for accelerating crystallization. CONSTITUTION: An ultra-thin oxide film 13 is formed on an amorphous silicon film 12 on a glass substrate 11. A solution 14 of acetic acid with an added catalytic element like nickel of 10 to 200ppm in adjusted quantity is dropped thereon. The substrate 11 is held in this state for a given time and subjected to spin drying using a spinner 15. Then, a heat treatment step at 550°C is carried out for 1 hour to form a crystal nucleus on the surface of the amorphous silicon film 12. In addition, a laser beam is cast to the side face of the crystal nucleus to accelerate crystal growth when a crystalline silicon film is formed.
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| 申请公布号 |
KR100297318(B1) |
申请公布日期 |
2001.05.21 |
| 申请号 |
KR19970076926 |
申请日期 |
1997.12.29 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
HISASHI OTANI;MIYANAGA AKIHARU;TAKEYAMA JUNICHI |
| 分类号 |
C30B29/06;C30B1/00;C30B30/00;H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L27/00;H01L27/01;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
C30B29/06 |
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