| 发明名称 |
OPTICAL SEMICONDUCTOR DEVICE AND PHOTOELECTRON INTEGRATED CIRCUIT DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To form an optical semiconductor device including a direct transition type active layer consisting of a mixed crystal of SiGeC. SOLUTION: A mixed crystal having a random atomic arrangement is used as a mixed crystal of SiGeC. |
| 申请公布号 |
JP2001135893(A) |
申请公布日期 |
2001.05.18 |
| 申请号 |
JP19990315424 |
申请日期 |
1999.11.05 |
| 申请人 |
FUJITSU LTD |
发明人 |
OBUCHI MARI |
| 分类号 |
H01L33/06;H01L33/14;H01L33/34;H01L33/40;H01S5/00;H01S5/026;H01S5/34 |
主分类号 |
H01L33/06 |
| 代理机构 |
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