LITHOGRAPHY PROCESS AND METHOD OF FABRICATION FOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a lithography process in which a high throughput can be ensured without requiring a high dose even when a charged particle beam having high kinetic energy is used. SOLUTION: An upper layer film having a secondary electron generation efficiency higher than that of a deposited resist is formed on the resist and then irradiated with an electron beam. According to the method, melting rate of resist is increased as compared with a case of single resist when the resist is irradiated with an electron beam at the same dose. Melting rate of resist is increased because sensitivity of the resist is enhanced by secondary electrons generated in the upper layer film.