| 摘要 |
PROBLEM TO BE SOLVED: To suppress the melt back of semiconductor materials and efficiently epitaxially grow semiconductor layers. SOLUTION: The top end of a cooling gas feed pipe 5 is disposed below a support container 1 housing a semiconductor wafer W, a gas feeder 6 provided outside a process chamber 3 feeds nitrogen gas, etc., to the cooling gas feed pipe 5, and the fed gas is cooled during passing through a portion wound with a cooling water piping 6 and discharged on the lower surface of the semiconductor wafer W from a gas discharge hole 51 formed at the top end of the cooling gas feed pipe 5. While a semiconductor layer epitaxially grows on the semiconductor wafer W surface, the lower surface of the wafer W can be cooled enough to suppress the melt back of GaP deposited on the wafer W surface, and thus the semiconductor layer can be efficiently epitaxially grown.
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