| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor of a semiconductor element which prevents generation of failures and damages of the capacitor by a cleaning operation after PH3 doping, and simplifies the process. SOLUTION: This method comprises the steps of: forming an interlayer insulation film forming a contact hole so as to expose only a predetermined part out of a surface of a substrate on a semiconductor substrate; forming a lower electrode in the predetermined part on the interlayer insulation film containing the contact hole; carrying out a first cleaning step; forming HSG in a surface exposure part of the lower electrode; carrying out a second cleaning step; doping PH3 in the interior of the HSG; and maintaining a vacuous state while forming a dielectric film on a resultant substance. For this reason, the interior of a leaf-type chamber is kept in a vacuous state, while the steps can successively be carried out, and also the number of times of cleaning operations can be reduced. Accordingly, it is possible to simplify a step of manufacturing a capacitor of a semiconductor element and to prevent damages. |
