LIGHT EMITTING DEVICE OF NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To offer a light emitting device of nitride semiconductor having excellent characteristics by using a thick-film substrate of nitride semiconductor. SOLUTION: A light emitting device of nitride semiconductor includes a thick-film substrate of nitride semiconductor 102, and a light emitting element structure comprising a plurality of nitride semiconductor layers 103-110 laminated on the substrate 102. The substrate 102 includes at least two layer regions, namely a first layer region 102a of high impurity concentration and a second layer region 102b of lower impurity concentration than the first layer region. The light emitting element structure is arranged on the first layer region 102a of the substrate 102.