| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon focus ring which can prevent defects caused by impurities such as heavy metal or the like. SOLUTION: This is a focus ring consisting of single crystal silicon used in a plasma device, and herein the concentration of oxygen between lattices contained in that focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3. In manufacturing the focus ring used for the plasma device, this focus ring is manufactured by growing the single crystalline silicon, where the concentration of oxygen between lattices is 5×1017 atom/cm3 and not more than 1.5×1018 atoms/cm3, by Czochralski method, and processes that single crystalline silicon into annular form. |
