发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THE SAME
摘要 PROBLEM TO BE SOLVED: To cause no damage to a chip, laminate a multiplicity of chips and facilitate fine connections. SOLUTION: A through-hole 6 is provided in an internal electrode 8 of a second semiconductor chip. A first metal 25, with which electroless plating is enabled, is formed on an inner wall of this through hole, while being insulated from other electrodes. A second semiconductor chip 7 is fixed on a first semiconductor chip in a portion except an external electrode 3 and an internal electrode 4 with an adhesive 5, so that the internal electrodes 4, 8 of the first and second semiconductor chips corresponding to each other. The internal electrodes 4, 8 and the first metal 25 on the inner wall of the through-hole are electrically connected via a second metal 15 continuously formed in the same composition. Thus, since the through-hole 6 is formed in the internal electrode 8 of the second semiconductor chip and semiconductor chips 1, 7 are laminated with the adhesive 5, a multiplicity of chips can be laminated without being damaged.
申请公布号 JP2001135776(A) 申请公布日期 2001.05.18
申请号 JP19990312222 申请日期 1999.11.02
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 MATSUMURA KAZUHIKO
分类号 H01L25/18;H01L21/768;H01L21/98;H01L23/12;H01L23/31;H01L23/48;H01L23/495;H01L25/065;H01L25/07 主分类号 H01L25/18
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