| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor backside working method whereby the backside of a semiconductor is quickly worked to easily process the backside of the semiconductor. SOLUTION: A semiconductor device 10 is settled with an Si base layer 20 on the backside upward, the entire surface of the Si base layer 20 on the backside of the semiconductor device 10 is polished, a working region of the backside of the semiconductor device 10 is specified and only this region is locally mechanically polished by a working unit 80 and ground until the semiconductor device 10 is 10μm to several tensμm thick at this region, and a processor 90 irradiates FIB to form an opening at an EB observing position, etc. Since the local mechanical polishing is at a higher polishing rate than the polishing by FIB, the working can be made for a shorter time than polishing all the working parts from the working region to the EB observing position, etc., by FIB in the prior art.</p> |
