| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for improving controllability of a base width regarding a method for manufacturing a semiconductor device where a vertical PNP transistor in that a P-type semiconductor substrate composes a collector region is formed on a semiconductor substrate where an epitaxial growth layer for composing an N-type base region is formed on the P-type semiconductor substrate. SOLUTION: In the method for manufacturing a semiconductor device where a base region is formed on an epitaxial growth layer and a vertical PNP transistor I in that a substrate composes a collector region is formed on a semiconductor substrate where an N-type epitaxial growth layer 6 is formed on a P-type semiconductor substrate 1, the epitaxial growth layer is formed, then ion implantation III is performed from the upper portion of the epitaxial growth layer only to a region where the PNP transistor is formed, and a high-concentration P-type region 30 is formed near the substrate surface, thus controlling a base width.
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