| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film field-effect transistor and the manufacturing method of the transistor. SOLUTION: This thin film field-effect transistor has (a) a thin film channel part, (b) a pair of first and second conductive source/drain parts opposing to each other adjacent to the said thin film channel part, (c) a gate insulator arranged abutting the thin film channel part for switching on the transistor by making a current flow to the said channel part and a gate and (d) the first source/drain parts having a first thickness, the second source/drain parts having a second thickness and a channel part having a third thickness. (At least either of the first thickness and the second thickness is thicker than the third thickness.) The manufacturing method of this transistor is also provided. |
