| 摘要 |
PROBLEM TO BE SOLVED: To obtain a preferable semiconductor member for forming an integrated circuit at high integration, and a method for manufacturing a semiconductor device in which a functional element is formed in such semiconductor member. SOLUTION: This method for manufacturing a semiconductor member comprises the steps of: forming a porous silicon layer on the surface of a first substrate; forming oxidization layers on the surface of the porous silicon layer and inside a hole; removing the oxidization layer formed on the surface of the porous silicon layer; thermally treating the porous silicon layer under a hydrogen ambiance; epitaxially growing a monocrystalline semiconductor layer on the porous silicon layer; laminating a second substrate in the monocrystalline semiconductor layer on the first substrate via an insulation layer therebetween; and eliminating the first substrate and the porous silicon layer from the laminated first and second substrates, to transfer the monocrystalline semiconductor layer onto the second substrate. |
