发明名称 METHOD OF MANUFACTURING MODULATOR INTEGRATED SEMICONDUCTOR LASER
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a modulator integrated semiconductor laser wherein a semiconductor laser and an optical modulator are integrated by using butt joint. SOLUTION: This manufacturing method consists of a process for growing a first optical confining layer 13, an active layer 14 of a laser and a second optical confining layer 15 on a semiconductor substrate, a process for eliminating parts of these layers by etching using a patterned insulating film as a mask, a process for growing an optical modulator in such a manner that the active layer 14 of the laser and a light absorbing layer 16 are subjected to butt joint by using a selective semiconductor crystal growth method, and a process for forming a means for injecting a current in the light absorbing layer which is a part of the optical modulator and whose energy gap in the vicinity of the butt joint part is narrowed.</p>
申请公布号 JP2001135888(A) 申请公布日期 2001.05.18
申请号 JP20000301935 申请日期 2000.10.02
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TAKEUCHI HIROAKI
分类号 G02F1/025;H01S5/026;H01S5/042;H01S5/12;(IPC1-7):H01S5/026 主分类号 G02F1/025
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