| 摘要 |
PROBLEM TO BE SOLVED: To enhance throughput by forming a rough resist pattern using other exposing method because the throughput decreases significantly when fine and rough resist patterns are written on the same substrate by direct EB writing. SOLUTION: The method of fabrication for a semiconductor device comprises a first lithography step for forming a first resist pattern 13 by optically exposing and developing a first resist applied onto a substrate 11, a step for silylating the first resist pattern 13, and a second lithography step for forming a second resist pattern 16 by electron beam exposing and developing a second resist applied onto the substrate 11 while leaving the silylated first resist pattern 13. The first resist pattern 13 is preferably subjected to oxygen plasma processing after the first resist pattern 13 is silylated before the second resist is applied. |
