| 摘要 |
PROBLEM TO BE SOLVED: To suppress the worsening of the morphology of an alloy film surface composed mainly of aluminum, when the film is formed using high-temperature sputtering. SOLUTION: An SiO2 insulating film 4 is deposited on a semiconductor substrate 1, and contact holes 5 are selectively made through the film 4. A Ti film 6 is deposited on the internal surfaces of the holes 5 and on the insulating film 4 through sputtering and an Al-Cu alloy film 7a is deposited over the whole surface of the Ti film 6 by sputtering. Then a second Al-Cu alloy film 7b is deposited on the Al-Cu alloy film 7a so as to fill the holes 5 by sputtering, while an Ar gas heated to 500 deg.C is blown against the backside of the substrate 1. Thereafter, a third Al-Cu alloy film 7c is deposited on the second Al-Cu alloy film 7b by sputtering, while an Ar gas cooled to 0 deg.C is blown against the backside of the substrate 1. Formation of the Al-Cu alloy films 7a-7c is performed continuously in the same chamber.
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