| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method whereby voids or seams can be blocked from growing, if design rules are severe. SOLUTION: For depositing a film on a semiconductor wafer, using an organic material e.g. TEOS, the working temperature among the working conditions is set to the thermal decomposition start temperature of TEOS, the organic material, e.g. within a range of 550-640 deg.C and the working pressure is set within a range of 266-798 Pa (2.0-6.0 Torr), thereby forming a film good in burying characteristics without growing voids or seams.
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