| 摘要 |
PROBLEM TO BE SOLVED: To provide a large-scaled thin ceramic substrate to be used for a wafer prober for preventing generation of bending even when it is exposed in a high temperature, and for preventing the damage to a silicon wafer even at the time of placing the silicon wafer on a chuck top conductive layer, and operating a continuity test. SOLUTION: A chuck top conductive layer is formed on one main face of a ceramic substrate, and a conductive layer is formed on the other main face so that a ceramic substrate to be used for a wafer prober can be constituted.
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