| 摘要 |
PROBLEM TO BE SOLVED: To shorten a parameter extracting time in extraction technique for a parameter for expressing bias base current dependency as to a 1/f noise, as a large number of measuring data and a long time for extraction are required in a conventional method. SOLUTION: In this method for extracting a noise parameter expressing bias base current dependency of a 1/f noise of a silicon high-porous transirtor, the noise parameter is extracted based on the dependency with respect to a base current of a noise voltage in an optional frequency in a frequency area where a frequency characteristic of the noise voltage is brought into 1/f, as to a circuit for grounding an emitter electrode of the high-porous transistor, impressing the first bias voltage to a collector electrode thereof through the first variable resistance, and impressing the second bias voltage to a base electrode through the second variable resistance to measure a noise-voltage- root-mean square generated in both ends of the first variable resistance.
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