发明名称 DEFECT RECOVERY METHOD OF THIN FILM PHOTOELECTRIC CONVERSION CELL, MANUFACTURING METHOD OF THIN FILM PHOTOELECTRIC CONVERSION MODULE AND DEFECT RECOVERY DEVICE OF THIN FILM PHOTOELECTRIC CONVERSION MODULE
摘要 <p>PROBLEM TO BE SOLVED: To provide a defect recovery method of a thin film photoelectric conversion cell, which enables the manufacture of a thin film photoelectric conversion module with its fully enhances output, the manufacturing method of the module and the defect recovery device of the module. SOLUTION: This defect recovery method is a method for recovering a thin film photoelectric conversion cell 10 having structures that first electrode layers 3, thin film photoelectric conversion units 4 and second electrode layers 5 are laminated in order on a substrate 2, and comprises a process that the value of a current, which is made to flow to the cell 10, is measured at a plurality of places by applying a first reverse bias voltage between the layers 3 and the layers 5 and the positions of the short-circuit parts 9 between the layers 3 and the layers 5 are specified on the basis of a difference between the measured values of the current, and a process that a second reverse bias voltage higher than the first reverse bias voltage is applied between the layers 3 and the layers 5 at the positions of the short-circuit parts 9 to heat the short-circuit parts 9, whereby the short-circuit parts 9 are insulated.</p>
申请公布号 JP2001135835(A) 申请公布日期 2001.05.18
申请号 JP19990317179 申请日期 1999.11.08
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 HAYASHI KATSUHIKO
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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