| 摘要 |
<p>PROBLEM TO BE SOLVED: To stack between the metal wrings an organic film containing fluorine which is excellent in adhesion with a base film and elaborateness of itself, and also has a void between metal wirings, without incurring the earth warming. SOLUTION: A plurality of metal wirings 106 are made on a semiconductor substrate 100 through a first silicon oxide film 101. Next, a first organic film containing fluorine, which has a void 107a between the metal wirings 106, is stacked between the plural metal wirings 106 and on their topside, using the material gas having C5F8 gas for its main components. Next, a second organic film containing fluorine, which does not have a void, is stacked on the first organic film 107 containing fluorine, using the material gas having C5F8 gas for its main components.</p> |
