发明名称 MANUFACTURING METHOD OF SILICON NITRIDE CIRCUIT BOARD
摘要 PROBLEM TO BE SOLVED: To solve low insulating resistance at a high temperature on a conventional nitride circuit board. SOLUTION: According to the manufacturing method of a silicon nitride circuit board, a brazing filler metal layer containing an active metal such as Ti, Zr, and Hf is formed on at least one of the surfaces of the silicon nitride board, a copper plate is formed on the brazing filler metal of the board, heating is carried out between the melting point of the brazing filler metal and a melting point of copper in a vacuum, the copper plate and the silicon nitride board are soldered, etching resist is formed into a predetermined shape on the copper plate, a copper circuit is formed into a predetermined shape by wet etching, the braying filler metal other then the copper circuit is removed by etching solution of the blazing filler metal, the silicon nitride board covered with copper is heated in an atmosphere of nitride, the copper surface is pickled, and a discoloring layer on the copper surface is removed. Furthermore, a nickel plating layer is formed as necessary at least one a part of copper of the silicon nitride circuit board covered with copper. A heating temperature is set at 330 deg.C or higher in the nitride.
申请公布号 JP2001135929(A) 申请公布日期 2001.05.18
申请号 JP19990316452 申请日期 1999.11.08
申请人 DOWA MINING CO LTD 发明人 NEI GYOSAN;KIMURA MASAMI;ITAHANA YOSHIHARU;KIHARA SHIGEFUMI
分类号 H05K3/06;C04B37/02;H01L23/12;H05K3/38;(IPC1-7):H05K3/38 主分类号 H05K3/06
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