| 摘要 |
PROBLEM TO BE SOLVED: To eliminate occurrence of uneven film thickness and generation of particles incident to continuous generation of abnormal discharge by providing a function for avoiding abnormal discharge automatically. SOLUTION: Plasma is generated in a reaction chamber by applying a high frequency power to electrodes in the reaction chamber being introduced with processing gas and a substrate held in the reaction chamber is subjected to a predetermined processing utilizing the plasma thus generated in a plasma processing system. The plasma processing system comprises means for detecting occurrence of abnormal discharge by monitoring variation of potential on the electrode (corresponding to Steps 102-105), means for detecting pressure in the reaction chamber upon occurrence of abnormal discharge (corresponding to Step 106), and means for calculating an optimal high frequency power based on the pressure in the reaction chamber upon occurrence of abnormal discharge and updating the applying power to the calculated value (corresponding to Steps 107, 108).
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