| 摘要 |
PROBLEM TO BE SOLVED: To prevent the defective embedding of a wiring film 24 in a wiring groove 22 and a connection hole 19 by preventing etching residues being left in the groove 22, which is formed by etching an interlayer dielectric 17 in a method, in which embedded wiring is formed by making the groove 22 communicated with the hole 19 through the dielectric 17 overlying the hole 19 and embedding the wiring film 24 in the groove 22 and hole 19, after the hole 19 is made through interlayer dielectrics 15 and 17. SOLUTION: An etching stopper film 16, which is used at the formation of a wiring groove 22, is formed between two interlayer dielectrics 15 and 17 and a connection hole 19 is formed through the dielectrics 15 and 17 and stopper film 16, in such a way that the diameter of the hole 19 becomes maximum at the position, where the hole 19 reaches the stopper film 16 to prevent formation of etching residues around an organic compound 20 which is exposed, when the dielectric 17 is etched at the formation of the wiring groove 22.
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