LEAD FRAME MATERIAL FOR SEMICONDUCTOR DEVICE CONSTITUTED BY HIGH-STRENGTH Cu ALLOY SUPERIOR IN ROLLING AND BENDING CHARACTERISTICS

摘要

PROBLEM TO BE SOLVED: To provide a lead frame material for a semiconductor device, whose plate thickness can be made thinner economically and which can be bent strongly. SOLUTION: This lead frame material for a semiconductor device is constituted of a high-strength Cu alloy superior in rolling and bending characteristics. The alloy has a composition composed of 0.07-0.4 weight % of Cr, 0.01-0.15 weight % of Zr, 0.01-0.4 weight % of Ti 0.01-1 weight % of Co and/or Fe and 0.002-0.4 weight % of Al and the remainder is Cu and unavoidable impurities.