| 摘要 |
Methods of forming face plate assemblies are described. In one implementation, a substrate is patterned with photoresist and a first phosphor-comprising material is formed over first surface areas of the substrate. The photoresist is stripped leaving some of the first phosphor-comprising material over substrate areas other than the first areas. Photoresist is again formed over the substrate and processed to expose second substrate areas which are different from the first substrate areas. In a preferred aspect, processing the photoresist comprises using a heated aqueous developing solution comprising an acid, e.g. lactic acid, effective to dislodge and remove first phosphor-comprising material from beneath the developed photoresist. A second phosphor-comprising material is formed over the substrate and the exposed second areas, with trace deposits being left over other substrate areas. The photoresist is subsequently stripped leaving some of the second phosphor-comprising material over substrate areas other than the first and second areas. Photoresist is again formed over the substrate and processed to expose third substrate areas which are different from the first and second areas. In a preferred aspect, processing the photoresist comprises using a heated aqueous developing solution comprising an acid, e.g. lactic acid, effective to dislodge and remove first and second phosphor-comprising material from beneath the removed photoresist. A third phosphor-comprising material is formed over the substrate and the exposed third areas.
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