发明名称 |
Ferromagnetischer Tunnelübergangs-Magnetsensor |
摘要 |
A ferromagnetic tunnel-junction magnetic sensor includes a first ferromagnetic layer, an insulation barrier layer formed on the first ferromagnetic layer and including therein a tunnel oxide film, and a second ferromagnetic layer formed on the insulation barrier layer, wherein the insulation barrier layer includes a metal layer carrying the tunnel oxide film thereon such that the tunnel oxide film is formed of an oxide of a metal element constituting the metal layer, and wherein the insulation barrier layer has a thickness of about 1.7 nm or less but larger than 1 molecular layer in terms of the oxide forming the tunnel oxide film. |
申请公布号 |
DE19813250(C2) |
申请公布日期 |
2001.05.17 |
申请号 |
DE1998113250 |
申请日期 |
1998.03.25 |
申请人 |
FUJITSU LTD., KAWASAKI |
发明人 |
SATO, MASASHIGE;KOBAYASHI, KAZUO;KIKUCHI, HIDEYUKI |
分类号 |
G01R33/09;G11B5/00;G11B5/012;G11B5/33;G11B5/39;H01F10/00;H01F10/08;H01F10/32;H01F41/30;H01F41/32;H01L43/08;H01L43/12;(IPC1-7):G11B5/39 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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