| 摘要 |
PURPOSE: A method for forming a polysilicon layer of a semiconductor device is provided to enhance the reliability of a device by preventing a breakdown of a device due to permeation of an etching solution to a gate oxide layer during a deglazing process. CONSTITUTION: After loading a wafer to a deposition apparatus, a first polysilicon layer(2a) is formed on a substrate(1) in about 50% of an entire thickness by performing a polysilicon deposition process while supplying a source gas at a temperature to be deposited. After terminating a supply of the source gas, a natural oxide layer(2b) is formed thinly on the first polysilicon layer in a range of some Å. A second polysilicon layer(2C) is formed on the first polysilicon layer having a natural oxide layer by performing the polysilicon deposition process under a formation condition of the first polysilicon layer in a desired thickness. A polysilicon layer(2) comprising the first and the second polysilicon layer are doped by an impurity and an oxide layer is formed on a surface of the polysilicon layer(2) by the impurity doping process. A deglazing process is performed to remove the oxide layer.
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