Production of conducting pathways comprises applying a metal layer and an insulating layer to a substrate, producing nitride and photoresist layers, forming a resist mask

摘要

Production of conducting pathways comprises applying a metal layer (1) to a substrate with integrated circuits; applying an insulating layer (2) to the metal layer; producing a TiN layer (3) and subsequently a photoresist layer (5); producing a first resist mask by forming a first hole pattern in the photoresist layer; removing the TiN layer exposed in openings (6) and the insulating layer underneath; removing the photoresist layer and the TiN layer; and depositing metal in the trenches and contact holes. An Independent claim is also included for a process for the production of the conducting pathways. Preferred Features: An anitreflection layer formed by a SION layer (4) is arranged between the photoresist layer and the TiN layer. The TiN layer is applied using a reactive plasma sputtering process.