ALKALINE ETCHING SOLUTION AND PROCESS FOR ETCHING SEMICONDUCTOR WAFERS

摘要

A process and an alkaline solution for etching a silicon wafer has been discovered wherein the wafer is subjected to an aqueous etching solution comprising a base and an oxidizing agent, wherein the base is comprised of a metal hydroxide such as sodium hydroxide or potassium hydroxide and the oxidizing agent is comprised of hydrogen peroxide or ozone, which enables the enhanced benefits of alkaline etching with reduced surface roughness.