| 摘要 |
The invention relates to a charge pump for generating high voltages for integrated semiconductor circuits. Said charge pump comprises a plurality of pump stages with at least one power transistor (M1x) each for generating a pump voltage (Vpmp) on a power track. The inventive charge pump is further characterized in that the power transistor (M1x) has a freely switchable bulk terminal (B) with which a trough-shaped structure of the power transistor can be maintained at a predetermined potential via a trough charge track that is substantially separate from the power track.
|
