发明名称 Protective metallic film for structure on semiconductor substrate against KOH etchant
摘要 A structure formed on a substrate (23) having a first face or leading face (25) and a second face or back face (27), this substrate being made of a material with a semiconductor base destined to be engraved by a reactive KOH agent, incorporates at least one zone (31) arranged on the leading face (25) made of a material able to be attacked by the reactive agent. The structure consists of a metallic film (40) formed on the leading face (25) in a manner that covers at least this zone (31). The metallic film (40) incorporates at least one external layer of gold (43) resistant to the reactive agent. Independent claims are included for a method for the fabrication of the structure of the main claim on a substrate and for the fabrication of an integrated membrane sensor.
申请公布号 EP1100118(A1) 申请公布日期 2001.05.16
申请号 EP19990122432 申请日期 1999.11.10
申请人 EM MICROELECTRONIC-MARIN SA 发明人 MUENCH, ULRICH
分类号 H01L21/308;H01L21/60 主分类号 H01L21/308
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