Field effect transistor structure and method of manufacture

摘要

A field effect transistor structure is formed with a body semiconductor layer (1) having source (3), channel (7), drift region (9) and drain (5). An upper metallisation layer (15,17) is separated from the body by an oxide layer (11). The upper metallisation layer (15,17) has a gate region (15) arranged over the body and a field plate region (17) arranged over the drift region (9). A source contact (39) is connected to both the source (9) and the field plate region (25).