发明名称 DEVICE AND METHOD FOR PLASMA PROCESSING
摘要 <p>The vacuum processing chambers 31 of the plasma processing units 3A and 3B are connected to the transfer chamber 2 and the wafer W in the positioned state is transferred from the transfer chamber 2 to the mounting stages 4 in the vacuum processing chambers 31. The volume and length of the wave guide 5 are the same between the plasma processing units 3A and 3B. The location relationship of the wave guide 5 to the transfer directions M1 and M2 of the transfer arm 61 is the same between the plasma processing units 3A and 3B. As a result, the location relationship of the wave guide 5 to the wafer W mounted on the mounting stage 4 in a predetermined direction is the same between the plasma processing units 3A and 3B. &lt;IMAGE&gt;</p>
申请公布号 EP1100115(A1) 申请公布日期 2001.05.16
申请号 EP19990957661 申请日期 1999.06.28
申请人 TOKYO ELECTRON LIMITED 发明人 AMANO, HIDEAKI
分类号 H05H1/46;C23C16/50;C23C16/511;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):H01L21/205;H01L21/306 主分类号 H05H1/46
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