发明名称 |
Thin film forming method |
摘要 |
In this thin film forming method, a first thin film is formed on a semiconductor substrate having the step height by chemical vapor deposition using a high density plasma. A base member on which a second thin film is formed is placed on the semiconductor substrate such that the first and second thin films oppose each other. The semiconductor substrate is heated to a first temperature to form the second thin film on the first thin film. The base member is peeled off from the second thin film. The second thin film formed on the first thin film is heated to a second temperature higher than the first temperature.
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申请公布号 |
US6232216(B1) |
申请公布日期 |
2001.05.15 |
申请号 |
US19970835992 |
申请日期 |
1997.04.11 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
MACHIDA KATSUYUKI;KYURAGI HAKARU;AKIYA HIDEO |
分类号 |
C23C16/04;H01L21/316;H01L21/768;(IPC1-7):C23C16/511 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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