Method for fabricating a capacitor of semiconductor memory device

摘要

There is provided a method for fabricating a capacitor of semiconductor memory device, which can prevent Ti from diffusing into the ferroelectric layer of capacitor from the Ti adhesive layer, which is formed at the time of metal wiring to decrease the contact resistance between the upper electrode of capacitor and the metal wire. In order to prevent diffusion of Ti into the inside of the capacitor, a dense oxide layer is formed on the ferroelectric layer such as SBTN.