| 摘要 |
PURPOSE: To form an Si crystal thin film whose crystal orientation property is superior on an insulating substrate, and to form a TFT whose characteristics such as mobility are superior by using this Si crystal thin film. CONSTITUTION: This method for manufacturing a crystal semiconductor thin film comprises a process for manufacturing an amorphous semiconductor thin film 13 on an insulating substrate 11, a process for bringing the surface of a single-crystal semiconductor substrate 14 constituted of the same materials as those of the amorphous semiconductor thin film 13 as main components with catalytic metal included in the surface into contact with the amorphous semiconductor thin film 13, and a process for carrying out heat treatment of the single crystal semiconductor substrate 14 and the amorphous semiconductor thin film 13 which are brought into contact with each other, at a temperature lower than the original crystallizing temperature of the amorphous semiconductor thin film 13, and for crystallizing the amorphous semiconductor thin film 13. |
