| 摘要 |
PURPOSE: To provide a semiconductor device for preventing the damage of a gate insulation film even if fine wiring is to be formed, and its manufacturing method. CONSTITUTION: The semiconductor device is provided with a transistor 28a with a gate electrode 26 being formed via a gate insulation film 24 on a ground substrate 10, an insulation film 30 that is formed on the transistor and the ground substrate, a plurality of first wiring 40a and 40b that are formed on the insulation film while being separated each other with a first interval d1, and second wiring 42 that is formed while being separated from either of the first wiring at a second interval d2 that is nearly equal to the first interval. Either of the first wiring is electrically connected to the first gate electrode, and the second wiring is electrically connected to the ground substrate. |
