| 摘要 |
PURPOSE: To provide a semiconductor device having a structure, where the potential of gate wiring is not affected by bit wiring when a dummy pad contact is formed on the end part of a memory cell, and to provide a manufacture method of the semiconductor device, which does not cause a large step near the end part of the memory cell. CONSTITUTION: A semiconductor device has a first pad contact 21a smaller than the first pad contacts 21a of a main body, which are opened and formed by a self-aligning system in a dot string shape along the end part of a memory cell. Conduction is interrupted in a path from the dummy first pad contact to a bit wiring 8. |
